北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北北
Untitled Document
The Advanced Programs Group
The USEA Advanced Programs Group, draws from a team of experienced engineers and scientists to provide detailed development, investigation, and analysis of customers' data and test results. The Advanced Programs Group leverages the following core skills to deliver value across our collaborators' programs:
  • Finite Element Modeling - Multiphysics modeling of collaborators' devices to understand their electrical, physical, and material interactions.
  • Advanced Mathematical Modeling - USEA is able to leverage a team equipped with advanced skills including fast fourier transforms, harmonic analysis, multi-polynomial curve fitting, and mathematical treatment of nonlinear systems.
  • Advanced Statistical Analysis - USEA's Advanced Programs Group is able to process large amounts of data and tease out correlations and determine the statistical significance of process changes and correlations.
  • Advanced Failure Analysis - USEA is able to leverage their engineers and scientists and an advanced suite of analytical tools to analyze failiure mechanisms beyond standard 8D studies. Examples of the tools we employ are:
  • - Decapping and deprocessing
    - Emission microscopy - Rapid troubleshooting of flip chips
    - Real-time X-Ray - Rapid wirebond and die attach integrity
    - Acoustic microscopy (CSAM) - Analysis of flip chip and CSP with additional insight provided by 3-D tomography
    - Selected area electron diffraction and TEM - Characterization of crystal structure of materials
    - Secondary ion mass spectrometry - Determination of the elemental, isotopic, and molecular composition of the surface
    - Scanning Auger microscopy - Spatial resolution of the surface chemical composition
    - Scanning electron microscopy (SEM) - High resolution imaging of surfaces
    - Fast ion bombardment - Localized surface modification and ejection of material from the surface
    - Vapor phase decomposition inductively coupled plasma mass spectrometry - Elemental analysis of semiconductor surfaces
    - Transmission electron microscopy - Analysis of structures at the submicron scale
    - Total reflection X-ray fluorescence (TRXF) - Ultra-trace analysis of surface contaminants
    - X-ray photoelectron spectroscopy (XPS) - Surface composition and electronic structure analysis (1-10 nm depth)
    Untitled Document